DCCT25D170G1 SiC Schottky Diode 1700V 25A TO-247-2 | G1 Single
WXDH
The DCCT25D170G1 is a 1700V, 25A Silicon Carbide Schottky diode designed for high-voltage and high-current industrial applications. Based on G1 SiC technology, it offers negligible reverse recovery losses, stable high-voltage blocking capability, and reliable performance up to 150°C junction temperature. The TO-247-2 package ensures strong heat dissipation for continuous high-power operation.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G1
Voltage Rating (VBR): 1700 V
Forward Current (IF): 25 A
Forward Voltage (VF): 1.6 V
Surge Current (IFSM): 120 A
Total Charge (Qc): 82 nC
Junction Temperature (Tj): 150°C
Configuration: Single
Package: TO-247-2
Applications
High-voltage industrial power converters
Renewable energy inverters
Medium-voltage motor drives
High-voltage DC transmission systems
High-power rectification stages
Features
Zero reverse recovery losses
High blocking capability (1700V)
Low conduction losses
High surge current rating
Robust TO-247 package
Reliable operation up to 150°C
