DCCT20D65G4 SiC Schottky Diode 650V 20A TO-247-2 | G4 Single

The DCCT20D65G4 is a 650V, 20A Silicon Carbide (SiC) Schottky diode engineered for high-efficiency and high-current power conversion systems. Built using advanced G4 SiC technology, it offers zero reverse recovery current, low switching losses, and stable operation up to 175°C junction temperature. The TO-247-2 package provides superior thermal performance, making it suitable for demanding industrial and renewable energy applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 20 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 160 A
Total Charge (Qc): 41 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2

Applications

High-power PFC circuits
Industrial power converters
Solar inverters
Motor drive rectification
UPS systems
High-current SMPS

Features

Zero reverse recovery current
Low conduction and switching losses
High surge capability (160A)
Excellent thermal performance
High-temperature operation to 175°C
Optimized for high-power applications