DCCT20D120G4 SiC Schottky Diode 1200V 20A TO-247-2 | G4 Single

The DCCT20D120G4 is a 1200V, 20A Silicon Carbide (SiC) Schottky barrier diode designed for high-voltage and high-current power conversion systems. Built using advanced G4 SiC technology, it delivers zero reverse recovery current, low conduction losses, and excellent thermal stability up to 175°C. The TO-247-2 package ensures superior heat dissipation, making it suitable for industrial and renewable energy applications requiring robust performance.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 20 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 180 A
Total Charge (Qc): 80 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2

Applications

High-voltage PFC circuits
Industrial power converters
Solar inverter rectification
Motor drive systems
EV charging infrastructure
High-power SMPS

Features

Zero reverse recovery current
Low switching and conduction losses
High surge capability (180A)
High blocking voltage (1200V)
Excellent thermal management
Optimized for high-power designs