DCCT15D120G4 SiC Schottky Diode 1200V 15A TO-247-2 | G4 Single

The DCCT15D120G4 is a 1200V, 15A Silicon Carbide (SiC) Schottky barrier diode designed for high-voltage and high-efficiency power conversion systems. Built on advanced G4 SiC technology, it offers zero reverse recovery current, low conduction losses, and reliable operation up to 175°C junction temperature. The TO-247-2 package provides excellent thermal performance, making it ideal for demanding industrial and renewable energy applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 15 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 135 A
Total Charge (Qc): 62 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2

Applications

High-voltage PFC circuits
Industrial power converters
Solar inverter rectification
Motor drive systems
EV charging infrastructure
High-power DC output stages

Features

Zero reverse recovery current
Low switching and conduction losses
High surge capability (135A)
High blocking voltage (1200V)
Excellent thermal management
Optimized for high-power applications