DCCT10D170G3 SiC Schottky Diode 1700V 10A TO-247-2 | G3 Single
WXDH
The DCCT10D170G3 is a 1700V, 10A Silicon Carbide Schottky barrier diode engineered for ultra-high-voltage power conversion systems. Utilizing advanced G3 SiC technology, it delivers zero reverse recovery current, low switching losses, and reliable operation up to 175°C junction temperature. The TO-247-2 package provides excellent thermal performance for industrial, renewable energy, and high-voltage infrastructure applications.
Key Specifications
Device Type: SiC Schottky Diode
Technology: G3
Voltage Rating (VBR): 1700 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.5 V
Surge Current (IFSM): 110 A
Total Charge (Qc): 106 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2
Applications
High-voltage PFC circuits
Industrial power supplies
Solar and wind energy systems
Medium-voltage motor drives
Grid-tied converters
Features
Zero reverse recovery current
Ultra-high blocking voltage (1700V)
Low switching losses
High surge current capability
Excellent thermal management
Optimized for high-voltage industrial systems
