DCCT10D120G4 SiC Schottky Diode 1200V 10A TO-247-2 | G4 Single

The DCCT10D120G4 is a 1200V, 10A Silicon Carbide Schottky barrier diode optimized for high-power and high-voltage applications. Built using advanced G4 SiC technology, it offers zero reverse recovery current, low power dissipation, and excellent thermal stability up to 175°C. The TO-247-2 package ensures enhanced heat dissipation, making it suitable for demanding industrial and renewable energy systems.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 10 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 90 A
Total Charge (Qc): 41 nC
Junction Temperature (Tj): 175°C
Configuration: Single
Package: TO-247-2

Applications

Industrial power supplies
Solar inverter rectification
High-voltage PFC circuits
Motor drive systems
EV charging infrastructure
High-power DC output stages

Features

Zero reverse recovery current
Low conduction losses
High surge capability
High blocking voltage (1200V)
Excellent thermal management
Optimized for high-power applications