DCCF075M120G2 SiC MOSFET 1200V 75mΩ 33A TO-247-4 | G2 High-Efficiency Power Device

The DCCF075M120G2 is a 1200 V SiC MOSFET utilizing G2 technology, designed to deliver high efficiency and robust switching performance. Its optimized characteristics make it suitable for high-power and high-voltage systems requiring improved thermal reliability.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 75 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 33 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 68 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-4

Typical Applications

• Industrial power converters

• Solar and energy storage inverters

• High-voltage SMPS

• EV fast charging systems

• Power factor correction (PFC)