DCCF060M90G2 SiC MOSFET 900V 60mΩ 35A TO-247-4 | G2 High-Efficiency Power Device

The DCCF060M90G2 is a 900 V SiC MOSFET based on G2 technology, offering excellent efficiency and switching performance for high-voltage applications. Its optimized design ensures reliable operation and improved thermal performance in power conversion systems.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 900 V

• On-Resistance (Rds(on)): 60 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 35 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 60 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-4

Typical Applications

• EV fast charging systems

• Industrial power converters

• Renewable energy inverters

• High-voltage SMPS

• UPS and energy storage systems