DCCF040M65G2 SiC MOSFET 650V 40mΩ 52A TO-247-4 | WXDH-Jiangsu Donghai G2 High-Efficiency Power Device

The DCCF040M65G2 is a 650 V Silicon Carbide (SiC) MOSFET based on advanced G2 technology, delivering low conduction losses with a 40 mΩ on-resistance and high current capability. It is designed for high-efficiency power conversion systems requiring robust thermal performance and fast switching.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 40 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 52 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 82 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-4

Typical Applications

• EV onboard chargers (OBC)

• Industrial motor drives

• Solar and energy storage inverters

• High-power DC-DC converters

• UPS systems