DCCF040M120A2 SiC MOSFET 1200V 40mΩ 65A TO-247-4 | G2 High-Efficiency Power Device

The DCCF040M120A2 is a 1200 V Silicon Carbide (SiC) MOSFET designed for high-efficiency, high-power applications. Featuring low 40 mΩ on-resistance and strong current capability, it enables reduced conduction losses and reliable high-temperature operation in demanding power systems.

Key Specifications

• Technology: SiC MOSFET (G2/A2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 40 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 65 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 120 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-4

Typical Applications

• EV traction and fast charging systems

• Industrial motor drives

• Solar and energy storage inverters

• High-power DC-DC converters

• UPS and power backup systems