DCCF030M65G2 SiC MOSFET 650V 30mΩ 55A TO-247-4 | WXDH-Jiangsu Donghai G2 High-Efficiency Power Device

The DCCF030M65G2 is a 650 V SiC MOSFET built on G2 technology, designed to deliver low conduction losses and excellent switching performance in high-power applications. Its low Rds(on) and high current rating make it ideal for high-efficiency power systems.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 30 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 55 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 110 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-4

Typical Applications

• EV powertrains and chargers

• Industrial power converters

• Solar and energy storage inverters

• High-power SMPS

• DC fast charging systems