DCCF030M120G2 SiC MOSFET 1200V 30mΩ 68A TO-247-4 | G2 High-Efficiency Power Device

The DCCF030M120G2 is a 1200 V SiC MOSFET utilizing advanced G2 technology, designed for high-efficiency power conversion. With low 30 mΩ Rds(on) and strong current handling capability, it enables improved system efficiency and thermal reliability in demanding applications.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 30 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 68 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 102 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-4

Typical Applications

• EV power systems

• Industrial power converters

• Renewable energy inverters

• High-voltage SMPS

• Power factor correction (PFC) stages