DCCF016M120G2 SiC MOSFET 1200V 16mΩ 120A TO-247-4 | G2 High-Efficiency Power Device

The DCCF016M120G2 is a 1200 V Silicon Carbide (SiC) MOSFET built on advanced G2 technology, featuring ultra-low 16 mΩ on-resistance and high current capability up to 120 A. It is engineered for high-power, high-efficiency systems requiring minimal conduction losses and superior thermal performance.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 16 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 120 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 269 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-4

Typical Applications

• EV traction inverters

• DC fast charging systems

• Industrial high-power motor drives

• Renewable energy inverters

• High-power DC-DC converters