DCC650M170G1 SiC MOSFET 1700V 650mΩ 7A TO-247-3 | G1 High-Voltage Power Device

The DCC650M170G1 is a 1700 V SiC MOSFET utilizing G1 technology, offering lower 650 mΩ on-resistance and improved current capability for high-voltage industrial applications. It is engineered for reliable operation in demanding power conversion environments.

Key Specifications

• Technology: SiC MOSFET (G1 platform)

• Drain-Source Voltage (VDS): 1700 V

• On-Resistance (Rds(on)): 650 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 7 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 23 nC

• Maximum Junction Temperature (TJ): 150 °C

• Package: TO-247-3

Typical Applications

• High-voltage industrial converters

• Renewable energy systems

• HV DC power supplies

• Grid infrastructure equipment

• Solid-state switching in high-voltage designs