DCC40D65G4 SiC Schottky Diode 650V 40A TO-247-3 | G4 Double

WXDH

The DCC40D65G4 is a 650V, 40A dual Silicon Carbide (SiC) Schottky diode designed for high-current and high-efficiency power conversion systems. Utilizing advanced G4 SiC technology, it delivers zero reverse recovery current, low forward voltage drop, and superior thermal stability up to 175°C. The TO-247-3 package integrates a double diode configuration, making it ideal for bridge rectification and high-power industrial applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 650 V
Forward Current (IF): 40 A
Forward Voltage (VF): 1.27 V
Surge Current (IFSM): 300 A
Total Charge (Qc): 82 nC
Junction Temperature (Tj): 175°C
Configuration: Double
Package: TO-247-3

Applications

Full-bridge rectifiers
High-power PFC circuits
Industrial power converters
Solar inverter front-end stages
High-current DC output rectification

Features

Dual diode configuration
Zero reverse recovery losses
Low conduction losses
High surge capability (300A)
Reduced component count in bridge designs
High reliability at elevated temperatures