DCC40D120G4 SiC Schottky Diode 1200V 40A TO-247-3 | G4 Double

The DCC40D120G4 is a 1200V, 40A dual Silicon Carbide (SiC) Schottky diode designed for high-voltage, high-current rectification in demanding power conversion systems. Built on advanced G4 SiC technology, it offers zero reverse recovery current, low conduction losses, and stable high-temperature operation up to 175°C. The TO-247-3 package integrates a double diode configuration, simplifying high-power bridge and parallel rectifier designs.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 40 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 360 A
Total Charge (Qc): 160 nC
Junction Temperature (Tj): 175°C
Configuration: Double
Package: TO-247-3

Applications

Full-bridge rectifiers
High-power PFC systems
Industrial power converters
Solar inverter front-end rectification
High-current DC output stages

Features

Dual diode configuration
Zero reverse recovery losses
Low forward voltage drop
High surge capability (360A)
Reduced component count in bridge designs
High reliability at elevated temperatures