DCC30D120G4 SiC Schottky Diode 1200V 30A TO-247-3 | G4 Double

The DCC30D120G4 is a 1200V, 30A dual Silicon Carbide Schottky diode engineered for high-efficiency rectification in high-voltage power systems. Utilizing advanced G4 SiC technology, it provides ultra-fast switching, negligible reverse recovery losses, and reduced power dissipation. The TO-247-3 package integrates a double diode configuration, simplifying bridge rectifier and parallel rectification designs in high-current applications.

Key Specifications

Device Type: SiC Schottky Diode
Technology: G4
Voltage Rating (VBR): 1200 V
Forward Current (IF): 30 A
Forward Voltage (VF): 1.45 V
Surge Current (IFSM): 270 A
Total Charge (Qc): 124 nC
Junction Temperature (Tj): 175°C
Configuration: Double
Package: TO-247-3

Applications

Full-bridge rectifiers
High-voltage PFC stages
Industrial power supplies
Solar inverter front-end stages
High-current DC output rectification

Features

Dual diode configuration
Zero reverse recovery current
Low forward voltage drop
High surge current capability (270A)
Reduced component count in bridge designs
High reliability at elevated temperatures