DCC1K0M170G1 SiC MOSFET 1700V 1000mΩ 5A TO-247-3 | G1 High-Voltage Power Device

The DCC1K0M170G1 is a 1700 V Silicon Carbide (SiC) MOSFET based on G1 technology, designed for ultra-high-voltage industrial applications. With 1000 mΩ on-resistance and stable switching performance, it is suitable for medium-current, high-voltage power systems requiring robust reliability.

Key Specifications

• Technology: SiC MOSFET (G1 platform)

• Drain-Source Voltage (VDS): 1700 V

• On-Resistance (Rds(on)): 1000 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 5 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 21.8 nC

• Maximum Junction Temperature (TJ): 150 °C

• Package: TO-247-3

Typical Applications

• High-voltage industrial converters

• Grid-connected power systems

• Renewable energy infrastructure

• HV DC-DC converters

• Solid-state switching in high-voltage systems