DCC140M120G2 SiC MOSFET 1200V 140mΩ 17A TO-247-3 | G2 High-Efficiency Power Device

The DCC140M120G2 is a 1200 V Silicon Carbide (SiC) MOSFET utilizing advanced G2 technology, engineered for high-voltage and high-efficiency power conversion. With robust performance and reliable thermal capability, it is suitable for demanding industrial and energy applications.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 140 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 17 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 42.5 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• Industrial motor drives

• Renewable energy inverters

• High-voltage DC-DC converters

• EV charging infrastructure

• High-efficiency power supplies