DCC075M120G2 SiC MOSFET 1200V 75mΩ 33A TO-247-3 | G2 High-Efficiency Power Device

The DCC075M120G2 is a 1200 V Silicon Carbide (SiC) MOSFET built on advanced G2 technology, offering a balance of low conduction losses and high current capability. It is designed for high-efficiency power conversion in demanding industrial and energy applications.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 75 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 33 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 68 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• Industrial motor drives

• Renewable energy inverters

• High-voltage DC-DC converters

• EV charging infrastructure

• High-efficiency power supplies