DCC060M90G2 SiC MOSFET 900V 60mΩ 35A TO-247-3 | G2 High-Efficiency Power Device

The DCC060M90G2 is a 900 V Silicon Carbide (SiC) MOSFET built on advanced G2 technology, designed for high-voltage power conversion applications. It provides low conduction losses, fast switching, and high reliability, making it suitable for demanding high-efficiency systems.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 900 V

• On-Resistance (Rds(on)): 60 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 35 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 60 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• High-voltage DC-DC converters

• Solar and energy storage inverters

• Industrial motor drives

• EV charging infrastructure

• High-efficiency power supplies