DCC060M65G2 SiC MOSFET 650V 60mΩ 41A TO-247-3 | WXDH-Jiangsu Donghai G2 Technology High-Efficiency Power Device

The DCC060M65G2 is a 650 V Silicon Carbide (SiC) MOSFET built on G2 technology, designed for high-efficiency, high-temperature power switching applications. With low on-resistance and fast switching characteristics, it is well suited for power conversion systems requiring high reliability and reduced switching losses.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 60 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 41 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 50 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• EV onboard chargers (OBC)

• DC-DC converters

• Solar inverters

• Motor drives

• High-efficiency SMPS