DCC040M65G2 SiC MOSFET 650V 40mΩ 52A TO-247-3 | WXDH-Jiangsu Donghai G2 High-Efficiency Power Device

The DCC040M65G2 is a 650 V SiC MOSFET utilizing G2 technology, delivering lower conduction losses with a reduced 40 mΩ on-resistance. It is designed for high-power applications requiring improved efficiency and thermal performance.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 40 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 52 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 82 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• EV powertrains and chargers

• Industrial motor drives

• Renewable energy inverters

• High-power DC-DC converters

• UPS systems