DCC040M120A2 SiC MOSFET 1200V 40mΩ 65A TO-247-3 | G2 High-Efficiency Power Device

The DCC040M120A2 is a 1200 V SiC MOSFET designed for high-efficiency power conversion, offering low 40 mΩ on-resistance and high current capability. It is suitable for demanding high-power applications requiring improved efficiency and thermal performance.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 40 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 65 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 120 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• EV traction and fast charging

• Industrial motor drives

• Solar and energy storage inverters

• High-power DC-DC converters

• UPS systems