DCC030M65G2 SiC MOSFET 650V 30mΩ 55A TO-247-3 | WXDH-Jiangsu Donghai G2 High-Efficiency Power Device

The DCC030M65G2 is a 650 V Silicon Carbide (SiC) MOSFET utilizing advanced G2 technology, offering very low conduction losses with a 30 mΩ on-resistance and high current capability. It is designed for high-efficiency power conversion applications where performance and thermal reliability are critical.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 650 V

• On-Resistance (Rds(on)): 30 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 55 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 110 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• EV onboard chargers (OBC)

• Industrial motor drives

• Renewable energy inverters

• High-power DC-DC converters

• UPS and energy storage systems