DCC030M120G2 SiC MOSFET 1200V 30mΩ 68A TO-247-3 | G2 High-Efficiency Power Device

The DCC030M120G2 is a 1200 V Silicon Carbide (SiC) MOSFET built on advanced G2 technology, delivering ultra-low 30 mΩ on-resistance and high current capability. It is engineered for high-efficiency, high-power applications where reduced conduction losses and robust thermal performance are essential.

Key Specifications

• Technology: SiC MOSFET (G2 platform)

• Drain-Source Voltage (VDS): 1200 V

• On-Resistance (Rds(on)): 30 mΩ

• Continuous Drain Current (ID @ Tc=25 °C): 68 A

• Gate Threshold Voltage (VGS(th)): 2.6 V

• Total Gate Charge (Qg): 102 nC

• Maximum Junction Temperature (TJ): 175 °C

• Package: TO-247-3

Typical Applications

• EV traction and fast charging systems

• Industrial motor drives

• Solar and energy storage inverters

• High-power DC-DC converters

• UPS systems