BLS65R380 – 650V Super Junction MOSFET, 11A, 0.33? RDS(on), Efficient Switching Device
Shanghai Belling
The BLS High Voltage Super Junction MOSFET series is engineered for high-efficiency power switching applications requiring superior performance at 600V, 650V, 700V, and 800V ratings. Built using advanced Super Junction technology, this series delivers ultra-low RDS(on), reduced switching losses, and excellent thermal stability, making it ideal for high-frequency and high-power systems.
With drain current capability up to 110A and RDS(on) as low as 18mΩ (typ.), these MOSFETs are optimized for energy-efficient designs in SMPS, PFC, solar inverters, UPS systems, EV chargers, and industrial power supplies. The devices operate with standard 10V gate drive and feature optimized gate threshold voltage (VGS(th)) characteristics for reliable switching performance.
Available in multiple industry-standard power packages including TO220, TO220F, TO251, TO252 (DPAK), TO247, TO247-4, TO3PN, and SOT223, the BLS Super Junction series supports both compact PCB layouts and high-power thermal management requirements.
Key Features (Series)
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Drain-Source Voltage (VDSS): 600V / 650V / 700V / 800V
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Continuous Drain Current (ID): Up to 110A
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Ultra-Low RDS(on): Down to 0.018Ω (Typ.)
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Super Junction Technology: Low switching loss & high efficiency
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Optimized VGS(th): 2.5V – 4.5V range
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High Avalanche Capability
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Fast Switching Performance
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Excellent Thermal Stability
Applications
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Switch Mode Power Supplies (SMPS)
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Power Factor Correction (PFC) Circuits
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Solar Inverters & PV Systems
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EV Chargers
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Industrial Power Supplies
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UPS Systems
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LED Drivers
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Telecom Power Systems