BLQM30N06L — 60V 30mΩ Trench NMOS, DFN3×3
Shanghai Belling
A compact trench MOSFET designed for space-constrained power designs requiring efficient switching performance.
Key Specifications
Voltage: 60V
RDS(on): 30mΩ
Features
Compact size
Efficient switching
BLQM30N06L — 60V 30mΩ Trench NMOS, DFN3×3
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