BLQG200T120 — 1200V 200A High-Power IGBT Chip

The BLQG200T120 is a high-voltage insulated gate bipolar transistor (IGBT) chip designed for high-power switching applications. With a blocking voltage of 1200V and current capability up to 200A, it provides low conduction loss and reliable switching performance. The device is optimized for power modules, motor drives, and industrial inverters where high efficiency and thermal stability are critical.

Key Specifications

Collector-Emitter Voltage: 1200V
Collector Current: 200A
Technology: High-power IGBT chip
Switching Performance: Optimized for low loss

Applications

Industrial motor drives
Power inverters
UPS systems
Power modules

Features

High voltage capability
Low conduction loss
High current density
Reliable switching