BLP12N10G Power MOSFET – 100V 50A SGT MOSFET, Ultra-Low RDS(on), High Efficiency Switching, TO220F / TO252 / PDFN5×6 / SOP8

The BLP12N10G is a 100V N-channel SGT (Shielded Gate Trench) MOSFET designed for high-efficiency power switching and high-reliability applications. The SGT structure provides ultra-low on-resistance, reduced gate charge, and improved switching performance, making it ideal for high-frequency and high-efficiency power conversion systems.

With a continuous drain current capability of 50A and availability in multiple package options, the device offers design flexibility for both compact surface-mount and high-power through-hole applications. It is widely used in power supplies, battery protection circuits, and industrial control systems requiring low losses and high robustness.

Key Specifications

• Drain-Source Voltage (VDS): 100V

• Continuous Drain Current (ID): 50A

• Technology: SGT MOSFET

• Ultra-Low RDS(on)

• Packages: TO220F, TO252, PDFN5×6, SOP8

Applications

• Switching power supplies

• DC-DC converters

• Battery protection and BMS

• Motor control systems

• Industrial power management

Features

• Shielded gate trench technology for high efficiency

• Low gate charge and fast switching

• Excellent thermal performance

• Multiple package options for design flexibility

• High reliability under heavy load conditions