BLP08N10G-Q – 100V Double Trench MOSFET, Low Loss, PDFN5×6

The BLP 100V Double Trench MOSFET series is a high-efficiency family of N-channel power MOSFETs developed using advanced double trench technology to achieve low RDS(on), fast switching performance, and high current capability. These devices are optimized for power conversion, motor drive, and industrial switching applications where efficiency and thermal reliability are critical.

This series includes both standard gate-drive and logic-level MOSFET variants, supporting low-voltage gate operation for direct MCU or driver control. With drain-source voltage ratings of 100V and continuous drain current capability up to 127A, the devices are offered in multiple compact and power packages including TO220, TO263, TO252, PDFN5×6, SOP8, and TO220F, enabling flexible PCB design and effective heat dissipation.

Key Specifications (Series)

• Drain-Source Voltage (BVdss): 100V

• Continuous Drain Current (ID): Up to 127A

• RDS(on): As low as 4.8 mΩ @ VGS = 10V

• Logic-Level Options: VTH as low as 1.0V

• Technology: Advanced Double Trench MOSFET

• Packages: TO220, TO263, TO252, PDFN5×6, SOP8, TO220F

Applications

• Switching power supplies (SMPS)

• DC-DC converters

• Motor control and motor drivers

• Battery management systems (BMS)

• Industrial power modules

• Automotive and telecom power systems

Features

• Advanced double trench structure for low conduction loss

• High current handling capability

• Logic-level gate options for low-voltage drive

• Excellent thermal and switching performance

• Wide package selection for design flexibility

• Suitable for high-efficiency and high-density power designs