BLP065N15J-B – 150V High Power Double Trench MOSFET, TO263 Package

The BLP Double Trench MOSFET series is a high-efficiency family of N-channel power MOSFETs developed using advanced double trench technology to achieve ultra-low RDS(on), high current capability, and excellent switching performance. This series covers 100V, 110V, 150V, and 200V voltage classes, making it suitable for a wide range of medium- to high-voltage power applications.

With continuous drain current ratings up to 401A, these MOSFETs minimize conduction losses and improve system efficiency in demanding environments. The devices support standard gate drive operation and are available in robust power packages such as TOLL8, TO220, TO263, and TO247, providing flexibility for both compact layouts and high-power thermal designs.

Key Specifications (Series)

• Drain-Source Voltage (BVdss): 100V / 110V / 150V / 200V

• Continuous Drain Current (ID): Up to 401A

• RDS(on): As low as 1.25 mΩ @ VGS = 10V

• Gate Threshold Voltage (VTH): 2.0V ~ 4.0V

• Technology: Advanced Double Trench MOSFET

• Packages: TOLL8, TO220, TO263, TO247

Applications

• Switching power supplies (SMPS)

• DC-DC converters

• Motor drives and motor control

• Power inverters and converters

• Industrial power systems

• Energy storage and UPS systems

Features

• Double trench structure for low conduction loss

• High current handling capability

• Excellent thermal and electrical stability

• Fast switching characteristics

• Industry-standard power packages

• Reliable operation in high-power environments