BLP065N08G — 85V 6.6mΩ SGT MOSFET, Multiple Packages
Shanghai Belling
The BLP065N08G is a shielded gate trench MOSFET designed for low conduction loss and high switching efficiency. It is suitable for high-current power conversion and switching applications.
Key Specifications
Drain-Source Voltage: 85V
RDS(on): 6.6mΩ
Packages: DFN5×6, TO-252, TO-220, TO-263
Applications
DC-DC converters
Motor drives
Features
Low RDS(on)
High efficiency
BLP065N08G — 85V 6.6mΩ SGT MOSFET, Multiple Packages
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