BLP03N10-P – 100V High Current Double Trench MOSFET, Low Loss, TO220

The BLP 100V Double Trench MOSFET series is a high-performance family of N-channel power MOSFETs manufactured using advanced double trench technology to deliver ultra-low RDS(on), high current capability, and excellent switching efficiency. These devices are designed to meet the demands of high-power, high-efficiency applications, ensuring reduced conduction loss and improved thermal performance.

With a 100V drain-source voltage rating and continuous drain current capability up to 364A, this series supports both standard gate-drive and logic-level options, enabling compatibility with a wide range of gate drivers and control ICs. Multiple industry-standard packages including TO220, TO263, TO252, PDFN5×6, TOLL8, TO247, and TO263-7 provide flexible solutions for compact designs and high-power systems.

Key Specifications (Series)

• Drain-Source Voltage (BVdss): 100V

• Continuous Drain Current (ID): Up to 364A

• RDS(on): As low as 1.6 mΩ @ VGS = 10V

• Gate Threshold Voltage (VTH): 1.0V ~ 4.0V (device dependent)

• Technology: Advanced Double Trench MOSFET

• Packages: TO220, TO263, TO252, PDFN5×6, TOLL8, TO247, TO263-7

Applications

• High-power DC-DC converters

• Switching power supplies (SMPS)

• Motor drives and motor controllers

• Battery management systems (BMS)

• Inverters and industrial power equipment

• Automotive and energy storage systems

Features

• Double trench structure for ultra-low conduction loss

• High current handling with excellent thermal stability

• Fast switching performance

• Logic-level and standard gate drive options

• Wide package selection for design flexibility

• Suitable for high-density and high-reliability power designs