BLP02N08-B – 85V 326A Ultra-Low RDS(on) Power MOSFET, TO263

The BLP Double Trench MOSFET series is a high-performance family of N-channel power MOSFETs designed for applications requiring low conduction loss, high current capability, and reliable switching performance. Utilizing advanced double trench technology, these devices achieve ultra-low RDS(on) and excellent thermal efficiency, making them well suited for high-power and high-density designs.

This series covers 85V to 100V drain-source voltage ratings with continuous drain current capability up to 370A, and includes both standard gate-drive and logic-level MOSFETs to support low-voltage MCU and driver compatibility. Multiple industry-standard packages such as TO220, TO263, TO252, PDFN5×6, TOLL8, TO247, SOP8, SOT89, and SOT223 provide flexible options for thermal management and compact PCB layouts.

Key Specifications

• Drain-Source Voltage (BVdss): 85V / 90V / 100V

• Continuous Drain Current (ID): Up to 371A

• RDS(on): As low as 1.2 mΩ @ VGS = 10V

• Gate Threshold Voltage (VTH): 1.0V – 4.0V (logic-level and standard options)

• Technology: Advanced Double Trench Structure

• Packages: TO220, TO263, TO252, TO247, PDFN5×6, TOLL8, SOP8, SOT89, SOT223

Applications

• Switching power supplies (SMPS)

• DC-DC converters

• Motor drives and motor control

• Battery management systems (BMS)

• Power tools

• Automotive and industrial power systems

• Inverters and power modules

Features

• Advanced double trench MOSFET technology

• Ultra-low RDS(on) for high efficiency

• High current capability and rugged design

• Logic-level gate options for low-voltage drive

• Excellent thermal and switching performance

• Wide package selection for design flexibility