BLM80P10-D / BLM80P10-P – −100V P-Channel Trench MOSFET, High Voltage, TO252 / TO220

The BLM80P10 series is a −100V P-Channel trench MOSFET optimized for high-voltage power switching applications. It offers stable performance with RDS(on) of 75mΩ (typ.) at VGS = −10V and supports −20A continuous drain current. Designed for industrial and power supply systems requiring reliable high-side switching.

Key Specifications

Drain-Source Voltage (VDS): −100V
Continuous Drain Current (ID): −20A
RDS(on) @ VGS = −10V: 75mΩ (Typ.), 90mΩ (Max.)
RDS(on) @ VGS = −4.5V: 85mΩ (Typ.), 100mΩ (Max.)
Gate Threshold Voltage (VTH): −1.0V to −2.4V
Packages: TO252 (BLM80P10-D), TO220 (BLM80P10-P)

Applications

Industrial power control
SMPS high-side switching
Motor drive circuits
Telecom power systems