BLM40P10-D / BLM40P10-P – −100V P-Channel Trench MOSFET, Low RDS(on), TO252 / TO220

The BLM40P10 series is a −100V P-Channel trench MOSFET engineered for efficient high-voltage switching with improved conduction performance. Featuring low RDS(on) of 35mΩ (typ.) at VGS = −10V and current capability up to −35A, it provides reliable operation in medium-to-high power applications.

Key Specifications

Drain-Source Voltage (VDS): −100V
Continuous Drain Current (ID): −35A
RDS(on) @ VGS = −10V: 35mΩ (Typ.), 42mΩ (Max.)
RDS(on) @ VGS = −4.5V: 42mΩ (Typ.), 50mΩ (Max.)
Gate Threshold Voltage (VTH): −1.0V to −2.4V
Packages: TO252 (BLM40P10-D), TO220 (BLM40P10-P)

Applications

High-side switching
Battery-powered systems
Power distribution modules
Industrial automation equipment