BLM30N06L MOSFET – 60V 30mΩ N-Channel Power MOSFET, High Efficiency Switching, TO252

Shanghai Belling

The BLM30N06L is a 60V N-channel power MOSFET engineered for efficient switching and low conduction loss. With low on-resistance of 30mΩ, it enables reduced heat generation and improved system efficiency in power conversion applications.

Its robust design ensures reliable operation under high load conditions, making it ideal for motor drive circuits, load switching, and DC-DC converters. The TO252 package offers excellent thermal performance for compact designs.

Key Specifications

  • VDS: 60V

  • RDS(on): 30mΩ

  • Technology: N-Channel MOSFET

  • Package: TO252

Applications

  • Power switching

  • Motor control

  • Battery systems

  • DC-DC converters

Features

  • Low conduction losses

  • High switching speed

  • Good thermal performance

  • Rugged device structure