BLM22N10-D – 100V Low RDS(on) Trench MOSFET for Power Conversion, TO252 Package

The BLM and BLQM Trench MOSFET series is a comprehensive range of low-to-high voltage N-channel and P-channel power MOSFETs engineered with advanced trench gate technology to provide low RDS(on), high current density, fast switching performance, and improved thermal efficiency. Designed for reliable operation at 4.5V and 10V gate drive levels (with logic-level options available), this series supports efficient power conversion and load control across industrial and consumer applications.

With voltage ratings ranging from 60V to 200V for N-channel devices and −20V to −40V for P-channel devices, and high continuous drain current capability, the BLM series is optimized for power supplies, motor drives, battery management, DC-DC converters, inverters, and high-efficiency switching systems. A wide selection of packages including SOT23, SOP8, PDFN, TO252 (DPAK), TO220, TO247, TO263, and TO264 ensures flexibility for both compact PCB layouts and high-power thermal designs.

Key Features (Series)

Drain-Source Voltage (BVdss): −40V to 200V

Continuous Drain Current (ID): Up to 400A (package dependent)

Low RDS(on): Optimized for 4.5V and 10V gate drive

Logic-Level Options: Available in select models (low VGS operation)

Low Gate Threshold Voltage (VTH): 1.0V – 5.0V (model dependent)

Technology: Advanced Trench MOSFET Structure

Packages: SOT23, SOP8, PDFN3.3×3.3, PDFN5×6, TO251, TO252 (DPAK), TO220, TO247, TO263, TO264

Applications

Switch Mode Power Supplies (SMPS)

DC-DC Converters

Motor Control & Motor Drivers

Battery Management Systems (BMS)

Load Switching & Protection Circuits

Industrial Power Systems

Automotive Auxiliary Systems

Inverters & UPS Systems

Consumer and Industrial Electronics