BLM15P04-D –40V P-Channel Trench MOSFET, Low RDS(on), TO252

The BLM15P04-D is a −40V P-Channel trench MOSFET designed for efficient high-side switching and load management applications. With low RDS(on) of 11mΩ (typ.) at VGS = −10V and strong current capability up to −40A, it ensures reliable performance in power management and DC switching systems. Available in TO252 (DPAK) package for good thermal performance.

Key Specifications

Drain-Source Voltage (VDS): −40V
Continuous Drain Current (ID): −40A
RDS(on) @ VGS = −10V: 11mΩ (Typ.), 15mΩ (Max.)
RDS(on) @ VGS = −4.5V: 14mΩ (Typ.), 20mΩ (Max.)
Gate Threshold Voltage (VTH): −1.0V to −2.4V
Package: TO252 (DPAK)

Applications

High-side load switch
Battery protection systems
DC-DC converters
Power distribution systems