BLM08N68-D – 68V Low RDS(on) Trench MOSFET, High Current Capability, TO252 Package

The BLM Trench MOSFET series is a family of low-voltage N-channel power MOSFETs built on advanced trench technology to deliver low RDS(on), fast switching, and excellent efficiency at low gate drive voltages. Designed to operate reliably at 2.5V, 4.5V, and 10V gate drive levels, this series is ideal for battery-powered, portable, and high-density power management applications.

With voltage ratings up to 30V and drain current capability reaching 150A, the BLM series supports both small-signal switching and high-current load control. Multiple compact and power packages such as SOT23, TSSOP8 (Dual), and TO252 (DPAK) allow flexible PCB design for space-constrained and thermally demanding applications.

Key Features (Series)

• Drain-Source Voltage (BVdss): 20V / 30V

• Continuous Drain Current (ID): Up to 150A

• Low RDS(on): Optimized for 2.5V / 4.5V / 10V gate drive

• Low Gate Threshold Voltage (VTH): 0.5V ~ 2.4V

• Technology: Advanced Trench MOSFET

• Packages: SOT23, TSSOP8 (Dual), TO252 (DPAK)

Applications

• Battery protection circuits

• Load switches

• DC-DC converters

• Power management ICs

• Portable and handheld devices

• Motor and relay driving

• Consumer and industrial electronics