AG2R1TFG N-Channel MOSFET 80V 220A | TO-3P Package | Doingter

The Doingter SGT2 & SGT3 MOSFET Series (SOT-23-6D, SOP-8, SOP-8D, SOT-223, TO-252, TO-252-4, TO-263, TDFN3×3, TDFN3333-8, TDFN3333-8PL, TDFN3333-8DSC, TOLLA-8, TO-220, TO-220F, TO-247, TO-247S, TO-3P, DFN3×3-8, DFN5×6-8, and TO-247-4L packages) is a comprehensive family of next-generation Shielded Gate Trench (SGT), SGT2, SGT3, SGT-FR, Dual MOSFET, and Silicon Carbide (SiC) MOSFET solutions engineered for ultra-high efficiency, low conduction loss, and fast switching performance. Manufactured using advanced semiconductor process technologies, the series provides ultra-low RDS(on), reduced gate charge, superior thermal characteristics, and exceptional reliability for modern power electronics.

The portfolio includes N-Channel, P-Channel, Dual N+N, Dual N+P, Asymmetric Dual MOSFETs, and high-voltage SiC MOSFETs, covering voltage ratings from 12V to 1200V. These devices are optimized for applications requiring high current capability, compact PCB layouts, excellent power density, and outstanding switching efficiency. With package options ranging from miniature surface-mount DFN and SOP packages to high-power TO-220, TO-247, TO-263, TO-3P, TO-252, and TOLLA-8 packages, the series offers maximum design flexibility across consumer, industrial, automotive, and energy applications.

The Doingter SGT2 & SGT3 MOSFET family incorporates the latest Shielded Gate Trench architecture, delivering significantly lower switching losses, higher current handling capability, improved EMI performance, and enhanced thermal efficiency compared to conventional trench MOSFET technologies. In addition, the portfolio includes 650V Super High-Voltage MOSFETs and 1200V Silicon Carbide (SiC) MOSFETs, providing outstanding efficiency for high-frequency power conversion, renewable energy, electric vehicle charging, industrial motor drives, and advanced power supply systems.

Key Features

• Advanced Shielded Gate Trench (SGT), SGT2, SGT3 and SGT-FR technologies
• Available in N-Channel, P-Channel, Dual N+N, Dual N+P and Asymmetric Dual MOSFET configurations
• High-voltage 650V MOSFET and 1200V Silicon Carbide (SiC) MOSFET solutions
• Ultra-low RDS(on) for minimized conduction losses
• Low gate charge for fast switching performance
• Excellent thermal efficiency and high power density
• High avalanche capability and rugged reliability
• Reduced switching losses with improved EMI performance
• Voltage range from 12V to 1200V
• Wide package selection including SOT-23-6D, SOP-8, SOP-8D, SOT-223, TO-252, TO-252-4, TO-263, TDFN3×3, TDFN3333-8, TDFN3333-8PL, TDFN3333-8DSC, TOLLA-8, TO-220, TO-220F, TO-247, TO-247S, TO-3P, DFN3×3-8, DFN5×6-8 and TO-247-4L
• Optimized for compact PCB layouts and high-efficiency power systems
• High reliability for automotive, industrial, telecom, and renewable energy applications
• Long operational lifetime with stable electrical performance

Applications

• Switch Mode Power Supplies (SMPS)
• AC-DC Power Supplies
• DC-DC Converters
• Synchronous Rectification
• Battery Management Systems (BMS)
• Motor Control and BLDC Motor Drives
• Load Switching and Power Distribution
• Industrial Automation Equipment
• Consumer Electronics
• Computing and Server Power Supplies
• Telecom and Networking Infrastructure
• Automotive Electronics
• Electric Vehicle (EV) Chargers
• On-Board Chargers (OBC)
• Solar Inverters
• Energy Storage Systems (ESS)
• UPS Systems
• PFC (Power Factor Correction) Circuits
• LED Lighting Drivers
• Renewable Energy Power Conversion
• High-Frequency Switching Applications
• Silicon Carbide (SiC) High-Efficiency Power Systems
• Industrial Welding Equipment
• Smart Grid and Power Management Systems