Shanghai Belling

BLQG200T120 — 1200V 200A High-Power IGBT Chip

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BLQG275T75F – 750V IGBT Module, 275A High Power, Modular Chip

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BLQG275T75F — 750V 275A High-Current IGBT Chip

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BLQG50T65 IGBT – 650V 50A Insulated Gate Bipolar Transistor, High Efficiency Power Switching, TO247

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BLQG50T65FCKA-F – 650V IGBT, 50A, Low Switching Energy, TO247

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BLQG50T65FDKA-F – 650V IGBT, 50A, Field Stop Technology, TO247

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BLQG50T65FDLA-F – 650V IGBT, 50A, Optimized Eon/Eoff, TO247

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BLQG50T65FKA-F – 650V IGBT, 50A, 1.65V VCE(sat), TO247 High Power IGBT

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BLQGMS820T75FEDL7 – 750V 820A IGBT Power Module, Ultra-High Current Fast Switching, HPD Package

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Hext by Regent Electronics

BLQM07N06 Power MOSFET – 60V 95A Trench N-Channel MOSFET, Low RDS(on), High Efficiency, TO252

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BLQM08N06 Power MOSFET – 60V 80A Trench N-Channel MOSFET, High Efficiency Switching, TO252

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BLQM08N06 Power MOSFET – 60V 80A Trench N-Channel MOSFET, Low Loss, High Reliability, TO252-2 Package

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BLQM08N06-D – 60V Trench MOSFET, Compact Design with High Efficiency Performance, TO252 Package

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BLQM10P03-E – 30V Enhanced P-Channel Trench MOSFET with Improved Efficiency, SOP8 Package

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BLQM10P03-Q – 30V Low RDS(on) P-Channel Trench MOSFET, PDFN5×6 Package

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BLQM15N06L — 60V 15mΩ Trench NMOS, TO-252

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BLQM15N06L-D – 60V Logic-Level Trench MOSFET, High Current Capability and Low Conduction Loss, TO252 Package

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BLQM30N06L — 60V 30mΩ Trench NMOS, DFN3×3

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BLQM30N06L-R – 60V Logic-Level Trench MOSFET, Compact High Power Density Design, PDFN3.3×3.3 Package

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BLQP065N08G-D – 85V 102A High-Efficiency Double Trench MOSFET, TO252

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BLR120 – High Precision Voltage Reference, 2.048V Output, 12V Max Input, ?40?~125?, 5ppm Typ / 10ppm Max Drift, 0.05% Initial Accuracy, 16µVpp Noise, SOIC8

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BLR125 – High Precision Voltage Reference, 2.5V Output, 12V Max Input, ?40?~125?, 5ppm Typ / 10ppm Max Drift, 0.05% Initial Accuracy, 20µVpp Noise, SOIC8

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BLR133 – High Precision Voltage Reference, 3.3V Output, 12V Max Input, ?40?~125?, 5ppm Typ / 10ppm Max Drift, 0.05% Initial Accuracy, 24µVpp Noise, SOIC8

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BLR140 – High Precision Voltage Reference, 4.096V Output, 12V Max Input, ?40?~125?, 5ppm Typ / 10ppm Max Drift, 0.05% Initial Accuracy, 30µVpp Noise, SOIC8

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